Title
Hfo2 Cmos Device And Circuit Reliability
Abstract
In this invited talk, HfO2 transistor channel hot electron and gate breakdown on device and circuit behaviors are presented. © 2007 IEEE.
Publication Date
12-1-2007
Publication Title
IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
Number of Pages
63-66
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
DOI Link
https://doi.org/10.1109/EDSSC.2007.4450062
Copyright Status
Unknown
Socpus ID
43049159323 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/43049159323
STARS Citation
Yuan, J. S., "Hfo2 Cmos Device And Circuit Reliability" (2007). Scopus Export 2000s. 6212.
https://stars.library.ucf.edu/scopus2000/6212
COinS