Title

Hfo2 Cmos Device And Circuit Reliability

Abstract

In this invited talk, HfO2 transistor channel hot electron and gate breakdown on device and circuit behaviors are presented. © 2007 IEEE.

Publication Date

12-1-2007

Publication Title

IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

Number of Pages

63-66

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/EDSSC.2007.4450062

Socpus ID

43049159323 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/43049159323

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