Title

Modeling And Analysis Of Metal Interconnect Resistance Of Power Ics

Abstract

The influence of metal interconnect resistance becomes increasingly critical as the power IC technology continues to advance. In this paper, we report a multi-layer quasi-3D finite element analysis (FEA) approach to model the influence of metal interconnect resistance of power IC's. We have used this FEA tool to analyze and optimize a large number of metal interconnect designs. Three case studies will be reported in this paper: 1) optimization of single-layer metal interconnect design; 2) analysis of two-layer metal interconnect design, and 3) novel three-layer metal interconnect designs. The modeling results are compared to measured device data for model validation. Reasonable agreement was observed. Design guidelines were generated based on the modeling results. © 2007 IEEE.

Publication Date

12-1-2007

Publication Title

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Number of Pages

253-256

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/ISPSD.2007.4294980

Socpus ID

39749155134 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/39749155134

This document is currently not available here.

Share

COinS