Title

Atomic-Scale Imaging Of Dopant Atom Distributions Within Silicon Δ-Doped Layers

Abstract

We report measurements of the distribution of Sb atoms in δ-doped Si, over a wide 2-D concentration range. Both annular dark-field imaging and electron energy loss spectroscopy proved sufficiently sensitive to locate Sb atoms at the atomic scale. Improvements in both detector sensitivities and specimen preparation were necessary to achieve these results, which offer a surprising explanation for the dramatic difference in electrical activity between 2-D and 3-D dopant distributions at the same effective volume concentrations. The prospects for the general identification of individual dopant atoms will be discussed. © 2001 Materials Research Society.

Publication Date

12-1-2000

Publication Title

Materials Research Society Symposium - Proceedings

Volume

589

Number of Pages

173-178

Document Type

Article

Personal Identifier

scopus

Socpus ID

0035210183 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0035210183

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