Title

Low-Frequency Noise Assessment Of Silicon Passivated Ge Pmosfets With Tin/Tan/Hfo2 Gate Stack

Keywords

Germanium (ge); Interface traps; Low-frequency (lf) noise; Oxide traps; PMOSFETs

Abstract

The low-frequency noise of pMOSFETs fabricated in epitaxial germanium-on-silicon substrates is studied. The gate stack consists of a TiN/TaN metal gate on top of a 1.3-nm equivalent oxide thickness HfO 2/SiO2 gate dielectric bilayer. The latter is grown by chemical oxidation of a thin epitaxial silicon film deposited to passivate the germanium surface. It is shown that the spectrum is of the 1//f γ type, which obeys number fluctuations for intermediate gate voltage overdrives. A correlation between the low-field mobility and the oxide trap density derived from the 1/f noise magnitude and the interface trap density obtained from charge pumping is reported and explained by considering remote Coulomb scattering. © 2007 IEEE.

Publication Date

4-1-2007

Publication Title

IEEE Electron Device Letters

Volume

28

Issue

4

Number of Pages

288-291

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/LED.2007.891797

Socpus ID

42549087470 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/42549087470

This document is currently not available here.

Share

COinS