Title
Hole Spin Relaxation In Neutral Ingaas Quantum Dots: Decay To Dark States
Abstract
The authors report measurements of hole spin relaxation in neutral InGaAs quantum dots using polarization-dependent time-resolved photoluminescence experiments. The single-particle hole spin relaxation was isolated from other spin flip processes in the electron-hole system by detecting the initial transfer of population from optically active to dark states. The results indicate that electron-hole exchange interactions play a negligible role in the carrier spin kinetics, and are consistent with a mechanism of hole spin relaxation via phonon-mediated virtual scattering between confined quantum dot states. © 2007 American Institute of Physics.
Publication Date
2-20-2007
Publication Title
Applied Physics Letters
Volume
90
Issue
5
Number of Pages
-
Document Type
Article
Personal Identifier
scopus
DOI Link
https://doi.org/10.1063/1.2437063
Copyright Status
Unknown
Socpus ID
33846967131 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/33846967131
STARS Citation
Hall, K. C.; Koerperick, E. J.; Boggess, Thomas F.; Shchekin, O. B.; and Deppe, D. G., "Hole Spin Relaxation In Neutral Ingaas Quantum Dots: Decay To Dark States" (2007). Scopus Export 2000s. 6900.
https://stars.library.ucf.edu/scopus2000/6900