Title
A 20-V Cmos-Based Monolithic Bidirectional Power Switch
Keywords
Battery protection circuitry; Bidirectional switch; On-resistance; Power MOSFET
Abstract
Bidirectional power-switching devices are needed in many power-management applications, particularly in lithium-ion battery protection circuitry. In this letter, a monolithic planar bidirectional power switch fabricated with a simplified CMOS technology is introduced. The new four-terminal device provides a blocking voltage greater than 20 V and a low on-resistance in either direction between its two power terminals. Detailed device characterization and analysis reveal that the new device structure has good latch-up immunity even though it comprises several p-n junctions in close proximity. This new CMOS-compatible power switch can be used in discrete form or as part of a power IC. © 2007 IEEE.
Publication Date
2-1-2007
Publication Title
IEEE Electron Device Letters
Volume
28
Issue
2
Number of Pages
174-176
Document Type
Article
Personal Identifier
scopus
DOI Link
https://doi.org/10.1109/LED.2006.889509
Copyright Status
Unknown
Socpus ID
33847414946 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/33847414946
STARS Citation
Fu, Y.; Cheng, X.; Chen, Y.; Liou, J. J.; and Shen, Z. John, "A 20-V Cmos-Based Monolithic Bidirectional Power Switch" (2007). Scopus Export 2000s. 6927.
https://stars.library.ucf.edu/scopus2000/6927