Title

Robust Esd Protection Solutions In Cmos/Bicmos Technologies

Keywords

Electrostatic discharge; Holding voltage; Latchup; Silicon controlled rectifier; Voltage snapback

Abstract

Robust and novel devices called High Holding, Low-Voltage-Trigger Silicon Controlled Rectifiers (HH-LVTSCRs) for Electrostatic Discharge (ESD) protection of integrated circuits (ICs) are designed, fabricated and characterized. The S-type current-voltage (I-V) characteristics of the HH-LVTSCRs are adjustable to different operating conditions by changing the device dimensions and terminal interconnections. Experimental results demonstrate that HH-LVTSCRs with a multiple-finger layout render high levels of ESD protection per unit area, applicable in the design of ICs with stringent ESD protection requirements of over 15 kV IEC. ©2007 IEEE.

Publication Date

1-1-2007

Publication Title

Proceeding of 2007 International Workshop on Electron Devices and Semiconductor Technology, IEDST 2007

Number of Pages

41-45

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/edst.2007.4289774

Socpus ID

36849063270 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/36849063270

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