Title
Hole Detrapping Effect On Gate Oxide Breakdown Under Dc And Ac Stresses
Abstract
The closed form expressions for time dependent dielectric breakdown (TDDB), were derived for both DC and AC stress conditions, including the hole detrapping effect. It was found that the hole detrapping effect in the unified model can give better prediction for the lifetime of a thin gate oxide. The model predictions were compared with the experimental results.
Publication Date
12-1-2000
Publication Title
International Integrated Reliability Workshop Final Report
Number of Pages
137-140
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
Copyright Status
Unknown
Socpus ID
0034431221 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/0034431221
STARS Citation
Duan, Xiaodong; Wu, Wen; and Yuan, J. S., "Hole Detrapping Effect On Gate Oxide Breakdown Under Dc And Ac Stresses" (2000). Scopus Export 2000s. 733.
https://stars.library.ucf.edu/scopus2000/733