Title

Redistribution Of Implanted Species In Polycrystalline Silicon Films On Silicon Substrate

Keywords

Diffusion; Ion implantation; Polycrystalline silicon; Secondary ion mass spectrometry

Abstract

Redistributions of implanted species after thermal annealing in polycrystalline silicon (poly-silicon) were studied by secondary ion mass spectrometry. Ten different elements were implanted into poly-silicon films grown on Si substrates. The implanted energies were chosen such that the expected ion range is within the poly-silicon film. Thermal anneals were carried out at temperatures between 300°C and 1000°C in flowing high purity Ar gas. Three different diffusion behaviors have been observed for these elements. For Be, Na, Ga, and Cr, most of the implanted ions diffused out to the surface of the poly-silicon film after anneal at 1000°C. For K, Ca, Ti, and Ge, the impurity ions diffused deeper into the bulk after anneal at 1000°C. For Cl and Mn ions, the concentration distributions became narrower when annealed at high temperatures.

Publication Date

1-1-2007

Publication Title

Defect and Diffusion Forum

Volume

264

Number of Pages

7-12

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.4028/3-908451-41-8.7

Socpus ID

34250016261 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/34250016261

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