Title
Electromigration Performance For Al/Sio2, Cu/Sio2 And Cu/Low-K Interconnect Systems Including Joule Heating Effect
Abstract
A thermal model for determining the interconnect temperature of different interconnect systems is developed. The analytical model predictions are compared with the two-dimensional numerical simulation results using the finite element analysis. Good agreement between the analytical model and the finite element analysis is obtained. At high current densities, the temperature of the Cu/low-K interconnect is much higher than that of the Cu/SiO2 and Al/SiO2 interconnects due to the lower thermal conductivity of the low-K dielectric.
Publication Date
12-1-2000
Publication Title
International Integrated Reliability Workshop Final Report
Number of Pages
165-166
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
Copyright Status
Unknown
Socpus ID
0034427773 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/0034427773
STARS Citation
Wu, W.; Kang, S. H.; and Yuan, J. S., "Electromigration Performance For Al/Sio2, Cu/Sio2 And Cu/Low-K Interconnect Systems Including Joule Heating Effect" (2000). Scopus Export 2000s. 739.
https://stars.library.ucf.edu/scopus2000/739