Title

Quasianalytical Model For Lt-Gaas And Lt-Al0.3Ga0.7As Misfet Devices

Abstract

This paper describes a quasianalytical model for the calculation of the current voltage characteristics of L.T GaAs and L.T. Al0.3Ga0.7As MISFET devices. The model is derived from basic semiconductor charge analysis. Poisson's equation, the current continuity equation, and the Chang Fetterman relocity-field equations have been solved analytically. When the devices are operating in the linear region and the knee region, the one-dimensional Poisson equation is considered. When the devices are in the saturation regime, the two-dimensioanl Poisson equation is solved analytically. The resulting output current-voltage characteristics are in good agreement with experimental data. This model has been used to predict the RF performance and RF power capability of these MISFETs.

Publication Date

10-5-2000

Publication Title

Microwave and Optical Technology Letters

Volume

27

Issue

1

Number of Pages

61-66

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1002/1098-2760(20001005)27:1<61::AID-MOP18>3.0.CO;2-U

Socpus ID

0034299713 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0034299713

This document is currently not available here.

Share

COinS