Title

Modeling And Analysis Of Metal Interconnect Resistance Of Power Mosfets With Ultra Low On-Resistance

Abstract

The issue of metal interconnect resistance becomes increasingly critical as the power MOSFET technology continues to advance. This paper introduces a three-dimensional finite element analysis (FEA) approach to model the influence of source metal on the performance of power MOSFETs with ultra low on-resistance. Various source metal interconnection designs for two commercial discrete packages, the D2PAK and DirectFET, are studied extensively using the newly developed FEA model. It is found that the number and location of wirebonds or solder pads as well as the interconnect layout all have considerable impact on the total on-resistance of a power MOSFET. Furthermore, the metal interconnect resistance imposes another limit on the lowest R DS(on) that can be practically achieved on power MOSFETs even in light of the ever-decreasing silicon-contributed specific on-resistance. © 2006 IEEE.

Publication Date

12-1-2006

Publication Title

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volume

2006

Number of Pages

-

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

Socpus ID

34247530451 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/34247530451

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