Title
Ultralow-Jitter And -Amplitude-Noise Semiconductor-Based Actively Mode-Locked Laser
Abstract
We report a semiconductor-based, low-noise, 10.24 GHz actively mode-locked laser with 4.65 fs of relative timing jitter and a 0.0365% amplitude fluctuation (1 Hz to 100 MHz) of the optical pulse train. The keys to obtaining this result were the laser’s high optical power and the low phase noise of the rf source used to mode lock the laser. The low phase noise of the rf source not only improves the absolute and relative timing jitter of the laser, but also prevents coupling of the rf source phase noise to the pulse amplitude fluctuationsby the mode-locked laser. © 2006 Optical Society of America.
Publication Date
10-1-2006
Publication Title
Optics Letters
Volume
31
Issue
19
Number of Pages
2870-2872
Document Type
Article
Personal Identifier
scopus
DOI Link
https://doi.org/10.1364/OL.31.002870
Copyright Status
Unknown
Socpus ID
33750160861 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/33750160861
STARS Citation
Quinlan, Franklyn; Gee, Sangyoun; Ozharar, Sarper; and Delfyett, Peter J., "Ultralow-Jitter And -Amplitude-Noise Semiconductor-Based Actively Mode-Locked Laser" (2006). Scopus Export 2000s. 7918.
https://stars.library.ucf.edu/scopus2000/7918