Title

Kinetics Of Oh Chemiluminescence In The Presence Of Silicon

Abstract

Ultraviolet emission from the OH(A-X) transition near 307 nm has been measured in a shock-tube for T = 1050-1400 K and P ≈ 1.2 atm. Experimental mixtures of H2/SiH4/O2/Ar and kinetics calculations were used to identify the elementary reaction forming electronically excited OH (OH*) in a Si-containing environment and directly measure its absolute rate coefficient. The primary Si-containing reaction found to form OH* is (R0)SiH + O2 = OH* + SiOwith a rate expression ofk0 = 1.5 × 107 exp (+ 16.4 kcal/RT) ± 2.3 × 1010 cm 3 mol -1 s -1This work provides insights into the mechanisms of combustion processes involving silicon. © 2006 Elsevier B.V. All rights reserved.

Publication Date

7-10-2006

Publication Title

Chemical Physics Letters

Volume

425

Issue

4-6

Number of Pages

229-233

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/j.cplett.2006.05.048

Socpus ID

33745152725 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/33745152725

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