Title

Improved And Physics-Based Model For Symmetrical Spiral Inductors

Keywords

Passive device; Quality factor; RF circuit; Spiral inductor

Abstract

Recent growth in RF applications has increased the use of spiral inductors and thus demanded a more accurate model for such devices. In this paper, the authors focus on the model development of spiral inductors with symmetrical terminals, but the same approach can be applied readily to asymmetrical inductors. Relevant and important physics such as the current crowding in metal line, frequency-dependent permittivity in oxide, and overlap parasitics are accounted for. Experimental data and results calculated from the existing inductor models are included in support of the model development. © 2006 IEEE.

Publication Date

6-1-2006

Publication Title

IEEE Transactions on Electron Devices

Volume

53

Issue

6

Number of Pages

1300-1309

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/TED.2006.874089

Socpus ID

33744790340 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/33744790340

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