Title

Inter-Valence-Band Hole-Hole Scattering In Cubic Semiconductors

Abstract

Transitions between valence subbands resulting from hole-hole scattering in cubic semiconductors have been analyzed in the frame of Coulomb interaction of valence electrons in the Luttinger-Kohn representation. Expressions for transition rates are derived. Calculated rates for transitions between light- and heavy-hole bands are presented for germanium. Hole-hole scattering has remarkably different transition probabilities and scattering-angle dependence than for scattering of holes on ionized impurities. These results are particularly important for hole lifetimes and relative subband populations in unipolar p -type devices, such as the hot hole p-Ge laser. Features of hole-hole scattering for spin polarized hole distributions are also discussed. © 2006 The American Physical Society.

Publication Date

3-6-2006

Publication Title

Physical Review B - Condensed Matter and Materials Physics

Volume

73

Issue

7

Number of Pages

-

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1103/PhysRevB.73.075327

Socpus ID

33644498873 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/33644498873

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