Title

Studies Of Electron Trapping In Iii-Nitride Semiconductors

Keywords

Acceptors; Cathodoluminescence; Diffusion length; Electron trapping; III-nitrides; P-type GaN

Abstract

Effects of electron irradiation on GaN and AlxGa1-xN doped with acceptor-forming species (Mg, C, Fe, and Mn) were studied by cathodoluminescence and electron beam induced current techniques. Low energy electron beam irradiation was shown to induce a systematic decay of the cathodoluminescence intensity, which is accompanied by increased electronic carrier diffusion length, indicating the increase of carrier lifetime. Temperature-dependent cathodoluminescence measurements allowed to estimate the activation energy for irradiation-induced effects, which was found to be comparable to the ionization energy of the dominant acceptor species. These observations are consistent with trapping of non-equilibrium electrons on deep, non-ionized acceptor levels. In (Al)GaN:Mg and GaN:C electrons are trapped by the ground state of the neutral acceptor atom, while in TM-doped compounds, electron irradiation-induced processes appear to involve a more energetically accessible excited states of the acceptors.

Publication Date

5-24-2006

Publication Title

Proceedings of SPIE - The International Society for Optical Engineering

Volume

6121

Number of Pages

-

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1117/12.658016

Socpus ID

33646711013 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/33646711013

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