Title

Fabrication Of 3-D Photonic Crystals By Two-Step Dry Etching Of Layered Media

Abstract

Photonic crystals have received growing interest over the past decade on account of their excellent functionality to guiding and manipulating electromagnetic radiation and their diverse applications. Our approach to fabricate crystals is by a two step etching process in a semiconductor hetero-structure of gallium arsenide (GaAs) and aluminum gallium arsenide (AlGaAs) grown using molecular beam epitaxy (MBE). An array of holes was dry etched in Cl 2/Ar inductively coupled plasma. Etching selectivity between the mask and the substrate was 10:1. By using SF 6 in addition to the boron-tri-chloride (BCl 3) chemistry, the GaAs is etched selectively over the AlGaAs with selectivities over 5:1. Thus a robust two-step etching process has been developed based entirely on dry etching.

Publication Date

5-3-2006

Publication Title

Proceedings of SPIE - The International Society for Optical Engineering

Volume

6110

Number of Pages

-

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1117/12.646461

Socpus ID

33646060729 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/33646060729

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