Title

Semi-Empirical Model For The Algaas/Gaas Hbt Long-Term Current Instability

Abstract

This paper develops a semi-empirical model for predicting the AlGaAs/GaAs heterojunction bipolar transistor (HBT) long-term current instability and mean time to failure (MTTF). The model involves the use of device physics as well as several empirical parameters which need to be determined from the pre- and post-burn-in data measured from a particular stress condition (i.e., stress temperature, current density, and time). Once these parameters are found, the model can then be used to predict the HBT reliability for various stress conditions. Experimental and modeling fitting for different HBTs subjected to thermal stress of 100-300°C and current stress of 104 to 5 × 104 A/cm2 are included in support of the model.

Publication Date

3-1-2000

Publication Title

Solid-State Electronics

Volume

44

Issue

3

Number of Pages

541-548

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/S0038-1101(99)00255-5

Socpus ID

0034159736 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0034159736

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