Title

In-Situ Al:Ti-Co-Doped La3Ga5.5Ta0.5O 14 Films For High-Q Resonators

Abstract

High-quality single-crystalline La3Ga5.5Ta 0.5O14 (LGT) films, in-situ co-doped with Al and Ti, have been grown by liquid phase epitaxy (LPE) on LGT substrates. The chemical composition of the films and substrates was analyzed by Secondary Ion Mass Spectroscopy (SIMS) and Rutherford Back Scattering (RBS). The abrupt change of dopant concentration at the substrate-film interface allow a precise measurement of film thickness, typically 0.5 to 2μm. for given growth conditions. Quantitative SIMS was performed by using Al/Ti ion-(co)-implanted LGT substrates as standards. The Al and Ti dopants are extremely homogeneously distributed, and their concentration is constant within the film thickness. The concentration of the constituent ions (La, Ga, Ta) in the LGT substrates and in the doped LGT films are slightly different. In-situ doping of LGT LPE films by selected ions can potentially be used to adjust the materials properties to specific bulk and surface acoustic wave applications requirements. © 2006 IEEE.

Publication Date

1-1-2006

Publication Title

Proceedings of the IEEE International Frequency Control Symposium and Exposition

Number of Pages

676-680

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/FREQ.2006.275468

Socpus ID

39049123295 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/39049123295

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