Title

Laser Direct Write Doping And Metallization Fabrication Of Silicon Carbide Pin Diodes

Keywords

Laser direct metallization; Laser doping; PIN diode

Abstract

A novel laser direct write doping and electrical property conversion technique has been used to fabricate prototype SiC PIN diodes on n-type 4H-SiC wafers. Two different diode structures are fabricated: (1) a laser aluminum doped top p+/p region on a n-type 4H-SiC wafer segment with a low doped n-type SiC epitaxial layer; and (2) the same laser doped top p +/p region on the same substrate and a laser heavily nitrogen doped n+ region at the bottom. A simple Schottky diode fabricated on the same substrate medium was used for a comparison. In the laser doped n + region conductors are directly fabricated by the formation of electrically conductive surface carbon rich phase. The results show that laser fabrication of PIN diodes, having a 10 μm epilayer, exhibits higher dopant concentrations and indicate promising breakdown voltages and forward voltage drops without edge termination.

Publication Date

1-1-2006

Publication Title

Materials Science Forum

Volume

527-529

Issue

PART 2

Number of Pages

823-826

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.4028/0-87849-425-1.823

Socpus ID

37849026407 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/37849026407

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