Title

Laser Endotaxy And Pin Diode Fabrication Of Silicon Carbide

Abstract

A laser solid phase diffusion technique has been utilized to fabricate endolayers in n-type 6H-SiC substrates by carbon incorporation. X-ray energy dispersive spectrometry (XEDS) analysis showed that the thickness of endolayer is about 100 nm. High resolution transmission electron microscopy (HREM) images indicate that the laser endotaxy process maintains the crystalline integrity of the substrate without any amorphization. The resistivity of the endolayer was 1.1 × 105 ω·cm and 9.4 × 104 ω·cm after annealing at 1000°C for 10 min. These resistivities provide device isolation for many applications. The silicon carbide endolayer was doped with aluminum using a laser doping technique to create p-region on the top surface of the endolayer in order to fabricate PIN diodes. © 2006 Materials Research Society.

Publication Date

1-1-2006

Publication Title

Materials Research Society Symposium Proceedings

Volume

911

Number of Pages

323-328

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1557/proc-0911-b10-07

Socpus ID

33750336993 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/33750336993

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