Title

Fabrication Of Zno/Gan Hybrid Light-Emitting Diodes

Abstract

We report on the fabrication of UV light-emitting diodes (LEDs) based on a p-n junction n-ZnMgO/n-ZnO/p-AlGaN/p-GaN semiconductor triple-heterostructure. Radio-frequency plasma-assisted molecular beam epitaxy was used to grow the complete heterostructure on p-AlGaN/p-GaN c-plane sapphire templates. The LEDs were fabricated by a process involving both wet and dry etching. Electroluminescence emission most likely associated with ZnO excitonic transition was observed up to 370°C. The results show the potential of ZnO-based materials for UV emitters of potentially lower cost and with comparable or higher emission intensity than comparable AlGaN/GaN devices. © 2005 The Electrochemical Society.

Publication Date

1-1-2006

Publication Title

ECS Transactions

Volume

1

Issue

2

Number of Pages

58-63

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

Socpus ID

32844458685 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/32844458685

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