Title

Hfo2 Gate Breakdown And Channel Hot Electron Effect On Mosfet Third-Order Intermodulation

Keywords

Breakdown (BD) location; Channel hot electron; Gate oxide breakdown; High-k transistors; Intermodulation distortion (IMD); Radio frequency (RF); Third-order intercept point

Abstract

The effect of n-channel hot electron and p-channel gate oxide breakdown (BD) on the third-order intermodulation of HfO2 MOS transistors has been studied. Both reliability physics mechanisms result in a similar shift of the intermodulation intercept point characteristics versus the absolute value of gate-source voltage. However, the device VIP3 in the subthreshold region is sensitive to BD leakage current and BD location effect. The third-order input intercept point as function of stress time was evaluated experimentally and compared with the analytical model predictions. A good agreement between the model predictions and experimental data is obtained. © 2008 IEEE.

Publication Date

10-16-2008

Publication Title

IEEE Transactions on Electron Devices

Volume

55

Issue

10

Number of Pages

2790-2794

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/TED.2008.2003031

Socpus ID

53649102080 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/53649102080

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