Title
Ferromagnetism And Microstructure In Cr Implanted P-Type (100) Silicon
Keywords
A. Cr; B. Anneal; B. Ion implantation; D. Ferromagnetism
Abstract
The magnetic properties and microstructure of p-type Si (100) implanted with 1.0×1015 cm-2 of Cr ions at 200 keV have been investigated by a superconducting quantum interference device (SQUID) magnetometer, scanning electron microscope (SEM) and transmission electron microscopy (TEM). The magnetic hysteresis loops and saturation magnetization of 0.67-0.75 emu/g in a wide temperature range are observed in the as-implanted sample. Annealing of the as-implanted sample modifies the microstructure and therefore weakens the magnetic exchange interaction. TEM observations show that the as-implanted silicon layer is amorphous. After annealing at temperature ≥800 {ring operator}C, the SEM showed that the implanted profile layer became blurred and narrow, the ferromagnetism was weakened, which should have resulted from the re-crystallization of the implanted amorphous layer. These results were further compared with magnetic hysteresis observed in Mn-implanted silicon. © 2008 Elsevier Ltd. All rights reserved.
Publication Date
10-1-2008
Publication Title
Solid State Communications
Volume
148
Issue
3-4
Number of Pages
122-125
Document Type
Article
Personal Identifier
scopus
DOI Link
https://doi.org/10.1016/j.ssc.2008.07.043
Copyright Status
Unknown
Socpus ID
50449103681 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/50449103681
STARS Citation
Gao, L. J.; Chow, L.; Vanfleet, R.; Jin, K.; and Zhang, Z. H., "Ferromagnetism And Microstructure In Cr Implanted P-Type (100) Silicon" (2008). Scopus Export 2000s. 9376.
https://stars.library.ucf.edu/scopus2000/9376