Title

Ferromagnetism And Microstructure In Cr Implanted P-Type (100) Silicon

Keywords

A. Cr; B. Anneal; B. Ion implantation; D. Ferromagnetism

Abstract

The magnetic properties and microstructure of p-type Si (100) implanted with 1.0×1015 cm-2 of Cr ions at 200 keV have been investigated by a superconducting quantum interference device (SQUID) magnetometer, scanning electron microscope (SEM) and transmission electron microscopy (TEM). The magnetic hysteresis loops and saturation magnetization of 0.67-0.75 emu/g in a wide temperature range are observed in the as-implanted sample. Annealing of the as-implanted sample modifies the microstructure and therefore weakens the magnetic exchange interaction. TEM observations show that the as-implanted silicon layer is amorphous. After annealing at temperature ≥800 {ring operator}C, the SEM showed that the implanted profile layer became blurred and narrow, the ferromagnetism was weakened, which should have resulted from the re-crystallization of the implanted amorphous layer. These results were further compared with magnetic hysteresis observed in Mn-implanted silicon. © 2008 Elsevier Ltd. All rights reserved.

Publication Date

10-1-2008

Publication Title

Solid State Communications

Volume

148

Issue

3-4

Number of Pages

122-125

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/j.ssc.2008.07.043

Socpus ID

50449103681 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/50449103681

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