Title

Determination Of Back Contact Barrier Height In Cu(In,Ga)(Se,S)2 And Cdte Solar Cells

Abstract

A relatively straightforward technique has been developed to quantify the energy barrier for holes between a Cu(In,Ga)(Se,S)2 (CIGSeS) or CdTe absorber and the back-contact metallization. The input data is the current-voltage (J-V) curves for the solar cell measured over a range of temperatures. The key parameter is the 'turning current' Jt, which is the current at the transition from the positive J-V curvature of a diode to the negative curvature associated with current limitation at a contact barrier. The analytical strategy is to calculate a series of Jt vs. T curves for different values of barrier height and then overlay the experimental values of Jt. Generally the experimental data follow a single barrier-height curve over a wide temperature range. The presentation will describe the turning point technique and apply it to specific solar-cell examples. The range of Jt that can be practically identified extends from approximately 0.1 to 80 mA/cm2. Assuming that temperatures between 220 and 340 K are available, the range of barriers that can be determined is between 0.30 and 0.55 eV. This is also the practical range, since lower barriers do not have a measurable effect on the power quadrant and higher ones effectively kill the performance of the cell. Many CIGSeS and CdTe cells, however, do have a back-contact barrier in the 0.30 to 0.55 eV range, and the ability to determine it can assist both cell analysis and process optimization. © 2008 IEEE.

Publication Date

12-1-2008

Publication Title

Conference Record of the IEEE Photovoltaic Specialists Conference

Number of Pages

-

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/PVSC.2008.4922886

Socpus ID

84879730019 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84879730019

This document is currently not available here.

Share

COinS