Title
Large Cavity Single Layer Quantum Dot Laser Diodes
Abstract
Large cavity, very low threshold single layer quantum dot laser diodes with threshold current density of 10 A/cm2, output power > 2 W, and very-low internal loss of 0.25 cm-1 are achieved at CW room-temperature. Mode-locked operation of a large cavity laser diode with 40 μm stripe width is demonstrated at 3.75 GHz repetition rate. ©2008 IEEE.
Publication Date
12-1-2008
Publication Title
Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Number of Pages
533-534
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
DOI Link
https://doi.org/10.1109/LEOS.2008.4688727
Copyright Status
Unknown
Socpus ID
58049168199 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/58049168199
STARS Citation
Shavitranuruk, K.; Kim, J.; Freisem, S.; Ozgur, G.; and Chen, H., "Large Cavity Single Layer Quantum Dot Laser Diodes" (2008). Scopus Export 2000s. 9689.
https://stars.library.ucf.edu/scopus2000/9689