Title

A Study Of On-Resistance And Switching Characteristics Of The Power Mosfet Under Cryogenic Conditions

Abstract

The decrease in on-resistance of power MOSFETs operation under cryogenic temperature leads to a considerable reduction in heat generation inside the device. An experimental measurement of on-resistances at 77 K, 173 K, 243 K and 295 K was carried out by applying cryogenic cooling techniques. The decrease in on-resistance and capacitance associated with the temperature led to an enhancement of overall time response of the MOSFETs. Another advantage associated with operating MOSFETs under cryogenic temperature is the decrease of the internal thermal resistance. The present work demonstrated that by exposing the device to cryogenic conditions, it is possible to implement high frequency, high power applications with MOSFET devices.

Publication Date

1-1-2000

Publication Title

International Journal of Electronics

Volume

87

Issue

1

Number of Pages

99-106

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1080/002072100132499

Socpus ID

18744383315 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/18744383315

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