Title

Local-Gated Single-Walled Carbon Nanotube Field Effect Transistors Assembled By Ac Dielectrophoresis

Abstract

We present a simple and scalable technique for the fabrication of solution processed and local-gated carbon nanotube field effect transistors (CNT-FETs). The approach is based on the directed assembly of individual single-walled carbon nanotubes from dichloroethane via AC dielectrophoresis (DEP) onto pre-patterned source and drain electrodes with a local aluminum gate in the middle. Local-gated CNT-FET devices display superior performance compared to a global back gate with on-off ratios >104 and maximum subthreshold swings of 170 mV/dec. The local bottom-gated DEP-assembled CNT-FETs will facilitate large-scale fabrication of complementary metal-oxide-semiconductor (CMOS) compatible nanoelectronic devices. © IOP Publishing Ltd.

Publication Date

4-30-2008

Publication Title

Nanotechnology

Volume

19

Issue

17

Number of Pages

-

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1088/0957-4484/19/17/175202

Socpus ID

42549113892 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/42549113892

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