Title
Silicon-Carbide-Based Extreme Environment Temperature Sensor Using Wavelength-Tuned Signal Processing
Abstract
A wavelength-tuned signal-processing approach is proposed for enabling direct unambiguous temperature measurement in a free-space targeted single-crystal silicon carbide (SiC) temperature sensor. The approach simultaneously exploits the 6H SiC fundamental Sellmeier equation-based wavelength-sensitive refractive index change in combination with the classic temperature-dependent refractive index change and the material thermal-expansion path-length change to encode SiC chip temperature with wavelength. Presently, the technique is useful for fast coarse temperature measurement as demonstrated from room temperature to 10000C using a 10-peak count wavelength-tuned measurement with a 0.31 nm total wavelength change. This coarse technique can be combined with the previously presented two-wavelength signal-processing temperature measurement approach to simultaneously deliver a wide temperature range and a highresolution temperature sensor. Applications for the sensor range from power plants to materials processing facilities. © 2008 Optical Society of America.
Publication Date
5-15-2008
Publication Title
Optics Letters
Volume
33
Issue
10
Number of Pages
1129-1131
Document Type
Article
Personal Identifier
scopus
DOI Link
https://doi.org/10.1364/OL.33.001129
Copyright Status
Unknown
Socpus ID
44949092542 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/44949092542
STARS Citation
Riza, Nabeel A. and Sheikh, Mumtaz, "Silicon-Carbide-Based Extreme Environment Temperature Sensor Using Wavelength-Tuned Signal Processing" (2008). Scopus Export 2000s. 9940.
https://stars.library.ucf.edu/scopus2000/9940