Title

Silicon-Carbide-Based Extreme Environment Temperature Sensor Using Wavelength-Tuned Signal Processing

Abstract

A wavelength-tuned signal-processing approach is proposed for enabling direct unambiguous temperature measurement in a free-space targeted single-crystal silicon carbide (SiC) temperature sensor. The approach simultaneously exploits the 6H SiC fundamental Sellmeier equation-based wavelength-sensitive refractive index change in combination with the classic temperature-dependent refractive index change and the material thermal-expansion path-length change to encode SiC chip temperature with wavelength. Presently, the technique is useful for fast coarse temperature measurement as demonstrated from room temperature to 10000C using a 10-peak count wavelength-tuned measurement with a 0.31 nm total wavelength change. This coarse technique can be combined with the previously presented two-wavelength signal-processing temperature measurement approach to simultaneously deliver a wide temperature range and a highresolution temperature sensor. Applications for the sensor range from power plants to materials processing facilities. © 2008 Optical Society of America.

Publication Date

5-15-2008

Publication Title

Optics Letters

Volume

33

Issue

10

Number of Pages

1129-1131

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1364/OL.33.001129

Socpus ID

44949092542 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/44949092542

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