Title

Sub-Micron Machining Of Semiconductors - Femtosecond Surface Ripples On Gaas By 2 Μm Laser Light

Keywords

Laser; Mid-IR; Modification; Ripples; Semiconductor; Ultrashort

Abstract

In recent years, a major interest in surface as well as bulk property modification of semiconductors using laser irradiation has developed. A.Kar et al. [1][2] and E.Mazur et al. [3] have shown introduction and control of dopants by long-pulse laser irradiation and increased absorption due to femtosecond irradiation respectively. With the development of mid-IR sources, a new avenue of irradiation can be established in a spectral region where the semiconductor material is highly transparent to the laser radiation. The characterization of the light-matter-interaction in this regime is of major interest. We will present a study on GaAs and its property changes due to pulsed laser irradiation ranging from the visible to the mid-IR region of the spectrum. Long-pulse as well as ultra-short pulse radiation is used to modify the material. Parameters such as ablation threshold, radiation penetration depth and thermal diffusion will be discussed. © 2010 Copyright SPIE - The International Society for Optical Engineering.

Publication Date

5-3-2010

Publication Title

Proceedings of SPIE - The International Society for Optical Engineering

Volume

7590

Number of Pages

-

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1117/12.843701

Socpus ID

77951613959 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/77951613959

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