Title

Ir Permittivities For Silicides And Doped Silicon

Abstract

The complex permittivity for Pt, Pd, Ni, and Ti-silicide films as well as heavily doped p- and n-type silicon were determined by ellipsometry over the energy range 0.031 eV to 4.0 eV. Fits to the Drude model gave bulk plasma and relaxation frequencies. Rutherford backscattering spectroscopy, X-ray diffraction, scanning electron microscopy, secondary ion mass spectrometry, and four-point probe measurements complemented the optical characterization. Calculations from measured permittivities of waveguide loss and mode confinement suggest that the considered materials are better suited for long-wavelength surface-plasmon-polariton waveguide applications than metal films. © 2010 Optical Society of America.

Publication Date

4-1-2010

Publication Title

Journal of the Optical Society of America B: Optical Physics

Volume

27

Issue

4

Number of Pages

730-734

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1364/JOSAB.27.000730

Socpus ID

77955667258 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/77955667258

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