Title

Ostwald Ripening Growth Of Silicon Nitride Nanoplates

Abstract

In this paper, we have demonstrated the Oswald ripening growth of single-crystalline Si3N4 nanoplates. The formation of the plates involves three basic steps: formation and aggregation of the nanoparticles, grain coalescence within selective areas, and growth of one coarsened grain at the expense of the rest of the nanoparticles via an Oswald ripening process assisted by the oriented attachment mechanism. The obtained nanoplates exhibit an extremely high aspect ratio with an ultrathin thickness, flat surface, and perfect crystal structure, and they could be utilized as substrates for constructing nanodevices. ©2009 American Chemical Society.

Publication Date

1-6-2010

Publication Title

Crystal Growth and Design

Volume

10

Issue

1

Number of Pages

29-31

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1021/cg901148q

Socpus ID

74049146788 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/74049146788

This document is currently not available here.

Share

COinS