Title

Nanometer Cmos

Abstract

This book gives a comprehensive overview of all important issues concerning modern Si MOSFETs. It covers the principles of MOSFET operation, theory and scaling issues and an in-depth discussion of nanometer MOSFETs. Both classical nanometer MOSFETs and non-classical MOSFET concepts, which receive little coverage in textbooks, are treated in detail. The device structures, merits and drawbacks of MOSFET concepts, such as strained Si MOSFETs, ultra-thin-body SOI MOSFETs and multiple-gate MOSFETs (FinFETs, tri-gate MOSFETs) are presented. An entire chapter is devoted to the emerging and rapidly growing field of RF MOSFETs/RF CMOS, and the discussion extends to the important future trends in nanometer CMOS technology and the problems and limits of scaling. © 2010 by Pan Stanford Publishing Pte. Ltd. All rights reserved.

Publication Date

2-1-2010

Publication Title

Nanometer CMOS

Number of Pages

-

Document Type

Article; Book Chapter

Personal Identifier

scopus

DOI Link

https://doi.org/10.4032/9789814241229

Socpus ID

78650022025 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/78650022025

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