Title

Studies Of Electron Trapping In Zno Semiconductor

Abstract

It has been recently discovered that electron injection into Phosphorus-, Lithium-, Antimony- or Nitrogen-doped ZnO semiconductor, using electron beam from a Scanning Electron Microscope, as well as a forward bias application to the p-n junction or Schottky barrier, leads to a multiple-fold increase of minority carrier diffusion length and lifetime (1-4). It has also been demonstrated that forward biasing a ZnO-based photovoltaic detector results in a several-fold responsivity enhancement due to a longer minority carrier diffusion length in the detector's p-region as a result of electron injection (5,6). The observed electron injection effects were attributed to the charging of the metastable centers associated with the above-referenced impurities. ©The Electrochemical Society.

Publication Date

1-1-2010

Publication Title

ECS Transactions

Volume

28

Issue

4

Number of Pages

3-11

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1149/13377093

Socpus ID

78650505733 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/78650505733

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