Title
Theoretical And Experimental Study Of A Semiconductor Resonant Cavity Linear Interferometric Intensity Modulator
Keywords
Injection locked lasers; modulators; semiconductor lasers
Abstract
The phase response of an injection locked semiconductor laser that is used as the phase modulator in a resonant cavity linear interferometric intensity modulator is studied in detail. It is shown that, signal-to-intermodulation ratio of such a modulator is affected by the injection ratio, linewidth enhancement factor of the semiconductor laser, residual amplitude modulation, depth of phase modulation, and linearity of the resonant cavity response. Experimental measurements of the signal-to-intermodulation ratio of this modulator using a semiconductor Fabry-Pérot laser as the resonant cavity are in good agreement with the theoretically predicted values. © 2011 IEEE.
Publication Date
11-22-2011
Publication Title
Journal of Lightwave Technology
Volume
29
Issue
22
Number of Pages
3421-3427
Document Type
Article
Personal Identifier
scopus
DOI Link
https://doi.org/10.1109/JLT.2011.2169771
Copyright Status
Unknown
Socpus ID
81355122979 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/81355122979
STARS Citation
Hoghooghi, Nazanin and Delfyett, Peter J., "Theoretical And Experimental Study Of A Semiconductor Resonant Cavity Linear Interferometric Intensity Modulator" (2011). Scopus Export 2010-2014. 1963.
https://stars.library.ucf.edu/scopus2010/1963