Title

Synthesis Of Cigs Absorber Layers From Bilayer Metal Precursors

Abstract

In-situ X-ray diffraction was used to study the pathways and kinetics as well as the Ga distribution during selenization of CIGS absorbers. Specifically a bilayer metal precursor structure consisting of a Cu-In bottom layer and a Cu-Ga top layer was examined. Precursor films were deposited on Mo-coated thin glass substrates using a molecular beam epitaxial reactor. During selenization of the precursor films, the only selenide observed was CuSe and CIGS. The compounds CuIn and Cu 11In 9 and the solid solution CuIn xGa 1-x, were evident. Notably, CGS did not form during temperature ramp selenization. Isothermal experiments were carried out and data were reduced using Avrami solid-state growth model to yield activation energy values for the formation of CIGS of 76 (±14) and 107 (±15) kJ/mol without and with a Se cap, respectively. The samples were further analyzed by TEM-EDS to measure the Ga distribution as well as by SEM (microstructure) and ICP (final composition). © 2011 IEEE.

Publication Date

12-1-2011

Publication Title

Conference Record of the IEEE Photovoltaic Specialists Conference

Number of Pages

393-395

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/PVSC.2011.6185977

Socpus ID

84861043478 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84861043478

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