Title
Challenges Of Electrostatic Discharge (Esd) Protection In Emerging Silicon Nanowire Technology
Abstract
Electrostatic discharge (ESD) induced failures continue to be a major reliability concern in the semiconductor industry. Such a concern will in fact be intensified as the CMOS technology is scaling toward the 22-nm and beyond. This paper covers the issues and challenges pertinent to the design of electrostatic discharge (ESD) protection solutions of the emerging and increasingly important Si nanowire technology. © 2011 IEEE.
Publication Date
12-1-2011
Publication Title
Proceedings of International Conference on ASIC
Number of Pages
256-258
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
DOI Link
https://doi.org/10.1109/ASICON.2011.6157170
Copyright Status
Unknown
Socpus ID
84860847139 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/84860847139
STARS Citation
Liou, Juin J.; Chang, Jiang; Cao, Guang Biao; Chang, Gung; and Feng, Chia, "Challenges Of Electrostatic Discharge (Esd) Protection In Emerging Silicon Nanowire Technology" (2011). Scopus Export 2010-2014. 2202.
https://stars.library.ucf.edu/scopus2010/2202