Title

Tungsten As An Alternate Conductor To Copper: Surface Scattering And The Electron Mean Free Path For (1 1 0) Epitaxial W Films

Abstract

Six (1 1 0)-oriented epitaxial W films with nominal thickness between 20 and 300 nm were prepared on (1 1 -2 0) Al 2O 3substrates. The thick film resistivity and the residual resistivity ratio were 6.3 μΩ-cm and 4.8, respectively. In the absence of grain boundaries, the upper bound electron mean free path (EMFP) in W was found to be 19.6 nm at room temperature based on the Fuchs-Sondheimer (FS) surface scattering model. A comparison is made between Cu and W for the linewidth dependent resistivity, and the resistivity of W is predicted to cross below that for Cu at linewidths below 11 nm.

Publication Date

12-1-2011

Publication Title

Advanced Metallization Conference (AMC)

Number of Pages

62-63

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

Socpus ID

84860211902 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84860211902

This document is currently not available here.

Share

COinS