Title

Recession And Characterization Of Patterned Nanowires Grown By Electroless Etching Of Silicon

Abstract

Silicon nanowires (SiNWs) were grown by the electroless etching technique using silver nitrate (AgNO 3)/hydrofluoric acid (HF) solution on a patterned p-type Silicon (Si) substrate with varying etching times. The various etch times produced different recession depths wherever the pattern allowed the etching solution to contact the Silicon substrate. At the bottom of each recession, SiNWs were produced of varying length and size, according to the depth of the recession. In this type of growth procedure, SiNWs are grown but the tips are etched away. SiNWs grown by this method tend to agglomerate or bunch at their tips. ©The Electrochemical Society.

Publication Date

12-1-2011

Publication Title

ECS Transactions

Volume

35

Issue

10

Number of Pages

63-73

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1149/1.3640405

Socpus ID

84861488195 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84861488195

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