Title

Numerical And Experimental Investigation Of Single Event Effects In Soi Lateral Power Mosfets

Keywords

Heavy ions; LDMOS; power devices; radiation effects; single event burnout; single event gate rupture

Abstract

150 V SOI lateral power MOSFETs were designed and fabricated with features intended to provide hardness against SEB and SEGR. The response of SOI power MOSFETs to heavy ion radiation was investigated both experimentally and using TCAD simulations. These power MOSFETs demonstrated an electrical performance figure of merit QGD× R DSON considerably improved over state of the art commercial trench VDMOS and rad-hard planar VDMOS devices, and survived heavy ion irradiation at the full V DS biasing of 150 V and full V GS biasing of - 16V simultaneously. © 2011 IEEE.

Publication Date

12-1-2011

Publication Title

IEEE Transactions on Nuclear Science

Volume

58

Issue

6 PART 1

Number of Pages

2739-2747

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/TNS.2011.2172956

Socpus ID

83755229137 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/83755229137

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