Title

A Fully On-Chip Esd Protection Uwb-Band Low Noise Amplifier Using Gaas Enhancement-Mode Dual-Gate Phemt Technology

Abstract

This paper presents the development of a novel ESD protected wideband low noise amplifier (LNA) using enhancement-mode (E-mode) pHEMT dual-gate clamps. The proposed novel clamp possesses a low on-state resistance, uniform parasitic capacitance, and flexibility to adjust the trigger voltage for different ESD applications. Implementation of the LNA demonstrates that RF performance can be maintained after human body mode (HBM) ESD test while at the same time endure more than +2.5 kV and -2 kV HBM ESD stress voltage. In addition, the incorporated clamps use a fewer number of diodes than the conventional diode stacks, thereby making it size efficient and low effort impedance matching co-design which allow this approach to be an attractive solution for ESD protection. © 2011 Elsevier Ltd. All rights reserved.

Publication Date

12-1-2011

Publication Title

Microelectronics Reliability

Volume

51

Issue

12

Number of Pages

2137-2142

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/j.microrel.2011.07.007

Socpus ID

81855221829 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/81855221829

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