Title
Theoretical Study Of Spur-Free Dynamic Range Of A Semiconductor Resonant Cavity Linear Interferometric Intensity Modulator
Keywords
Injection locking; Linear modulator; Semiconductor laser
Abstract
Simulation results of the performance of a semiconductor resonant cavity linear interferometric intensity modulator are presented. Starting from the rate equations of an injection locked semiconductor laser, the phase response and stable locking range of the injection locked semiconductor laser were obtained. Within the stable locking range without any approximation on the injection power level, effects of the alpha parameter or linewidth enhancement factor of the injection locked semiconductor slave laser, injection ratio, refractive index, and the residual amplitude modulation on the spur-free dynamic range (SFDR) of the modulator are studied. © 2011 SPIE.
Publication Date
6-6-2011
Publication Title
Proceedings of SPIE - The International Society for Optical Engineering
Volume
8054
Number of Pages
-
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
DOI Link
https://doi.org/10.1117/12.886390
Copyright Status
Unknown
Socpus ID
79957806272 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/79957806272
STARS Citation
Hoghooghi, N. and Delfyett, P. J., "Theoretical Study Of Spur-Free Dynamic Range Of A Semiconductor Resonant Cavity Linear Interferometric Intensity Modulator" (2011). Scopus Export 2010-2014. 2467.
https://stars.library.ucf.edu/scopus2010/2467