Title

Fast Release Process Of Metal Structure Using Chemical Dry Etching Of Sacrificial Si Layer

Keywords

Chemical dry etching; Nitric oxide (NO); Release etching; Remote plasma; Silicon

Abstract

An ultra-fast removal process of a silicon sacrificial layer for the selective release of a metal structure on a Si substrate was studied, which uses a chemical dry etching method. The chemical dry etching of a Si layer was performed in an NF3 remote plasma with the direct injection of additive nitric oxide (NO) gas. When the NO gas was injected into the chamber into which F radicals were supplied from a remote plasma source using NF 3 input gas, the silicon layer was removed selectively and the metal structure could be released easily. It was found that the etch rate on the sidewall (up to ≅ 18.7 μm/min for an opening width of 100 μm) and the bottom (up to ≅ 24.5 μm/min for an opening width of 100 μm) depends on the NO/(NO + Ar) gas flow ratio, time duration, and opening width. The developed dry etching process could be used to release a Ni structure with near infinite selectivity in a very short time. The process is well suited for fabricating various devices which require a suspended structure, such as in radio-frequency microelectromechanical system switches, tunable capacitors, high-Q suspended inductors and suspended-gate metal-oxide semiconductor field-effect transistors. © 2011 Elsevier B.V.

Publication Date

8-1-2011

Publication Title

Thin Solid Films

Volume

519

Issue

20

Number of Pages

6769-6772

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/j.tsf.2011.04.072

Socpus ID

80051551842 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/80051551842

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