Title

Investigation Of Chemical Bath Deposition Of Cdo Thin Films Using Three Different Complexing Agents

Keywords

CdO; Chemical bath deposition; Group II-VI Semiconductors; Thin films

Abstract

Chemical bath deposition of CdO thin films using three different complexing agents, namely ammonia, ethanolamine, and methylamine is investigated. CdSO 4 is used as Cd precursor, while H 2 O 2 is used as an oxidation agent. As-grown films are mainly cubic CdO 2 , with some Cd(OH) 2 as well as CdO phases being detected. Annealing at 400 °C in air for 1 h transforms films into cubic CdO. The calculated optical band gap of as-grown films is in the range of 3.37-4.64 eV. Annealed films have a band gap of about 2.53 eV. Rutherford backscattering spectroscopy of as-grown films reveals cadmium to oxygen ratio of 1.00:1.74 ± 0.01 while much better stoichiometry is obtained after annealing, in accordance with the X-ray diffraction results. A carrier density as high as 1.89 × 10 20 cm -3 and a resistivity as low as 1.04 × 10 -2 Ω-cm are obtained. © 2011 Elsevier B.V. All rights reserved.

Publication Date

9-1-2011

Publication Title

Applied Surface Science

Volume

257

Issue

22

Number of Pages

9237-9242

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/j.apsusc.2011.04.060

Socpus ID

80051549100 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/80051549100

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