Title
A Continuous Semi-Empiric Transfer Characteristics Model For Surrounding Gate Undoped Polysilicon Nanowire Mosfets
Keywords
Compact model; Lambert function; Nanowire MOSFETs; Parameter extraction; Polysilicon
Abstract
A new continuous semi-empiric compact model for the current transfer characteristics of surrounding gate undoped polycrystalline silicon (Poly-Si) nanowire (NW) MOSFETs is proposed. The model consists of a single equation based on the Lambert function, which contains only four parameters and is continuously valid and fully differentiable throughout weak and strong conduction regimes of operation. The model is tested on measured transfer characteristics of experimental devices. The extracted model parameters are used to generate transfer characteristics playbacks that are then compared to the measured data to validate the proposed model's adequacy for these devices. © 2011 Elsevier Ltd. All rights reserved.
Publication Date
9-1-2011
Publication Title
Solid-State Electronics
Volume
63
Issue
1
Number of Pages
22-26
Document Type
Article
Personal Identifier
scopus
DOI Link
https://doi.org/10.1016/j.sse.2011.05.004
Copyright Status
Unknown
Socpus ID
80051792071 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/80051792071
STARS Citation
García-Sánchez, F. J.; Latorre-Rey, A. D.; Liu, W.; Chen, W. C.; and Lin, H. C., "A Continuous Semi-Empiric Transfer Characteristics Model For Surrounding Gate Undoped Polysilicon Nanowire Mosfets" (2011). Scopus Export 2010-2014. 2788.
https://stars.library.ucf.edu/scopus2010/2788