Title

Optical Properties Of Zno Nanowire Arrays Electrodeposited On N- And P-Type Si(1 1 1): Effects Of Thermal Annealing

Keywords

Annealing; Electrodeposition; Electrolyte-Si junction; Photoluminescence; ZnO nanowires; ZnO/Si heterojunction

Abstract

Electrodeposition is a low temperature and low cost growth method of high quality nanostructured active materials for optoelectronic devices. We report the electrochemical preparation of ZnO nanorod/nanowire arrays on n-Si(1 1 1) and p-Si(1 1 1). The effects of thermal annealing and type of substrates on the optical properties of ZnO nanowires electroplated on silicon (1 1 1) substrate are reported. We fabricated ZnO nanowires/p-Si structure that exhibits a strong UV photoluminescence emission and a negligible visible emission. This UV photoluminescence emission proves to be strongly influenced by the thermal annealing at 150-800 °C. Photo-detectors have been fabricated based on the ZnO nanowires/p-Si heterojunction. © 2011 Elsevier B.V. All rights reserved.

Publication Date

9-25-2011

Publication Title

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volume

176

Issue

16

Number of Pages

1277-1284

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/j.mseb.2011.07.017

Socpus ID

80052401040 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/80052401040

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