Title

Enhanced Control Over Selective-Area Intermixing Of In 0.15Ga0.85As/Gaas Quantum Dots Through Post-Growth Exposure To Radio-Frequency Plasma

Keywords

Bandgap engineering; Impurity free vacancy disordering; Interdiffusion; Optical properties; Plasma treatment; Post-growth intermixing; Quantum dots; Semiconductor epitaxial layer

Abstract

Post-growth treatment with a low pressure, CF4-plasma is demonstrated to reliably inhibit the interdiffusion of In and Ga atoms in In0.15Ga0.85As/GaAs self-assembled quantum dot wafer structures subjected to rapid thermal annealing temperatures between 700 °C and 800 °C for a duration of 20 s. Comparative studies of the effects of rapid thermal annealing were made on plasma treated samples and samples that were capped with either 200 nm of plasma enhanced chemical vapor deposited SiO2 or 220 nm of thermally deposited TiO2 prior to plasma exposure, as well as to uncapped, untreated control samples. Room-temperature photoluminescence spectra were acquired using a Ti-Sapphire laser operating at 742 nm as the excitation source. A bandgap differential of 84 meV (94 nm) was measured across a wafer sample annealed at 775 °C, when contrasting sections that were uncapped and treated with the CF4-plasma versus sections that were annealed without any treatment to the surface. This was comparable to a sample that was capped with the TiO2 film, which produced a 73.5 meV (82 nm) variance from the raw, annealed-only sample. © 2010 Elsevier B.V. All rights reserved.

Publication Date

1-3-2011

Publication Title

Thin Solid Films

Volume

519

Issue

6

Number of Pages

1955-1959

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/j.tsf.2010.10.023

Socpus ID

78651251501 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/78651251501

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