Title

Cmos Rf Power Amplifier Variability And Reliability Resilient Biasing Design And Analysis

Keywords

Hot electron; Monte Carlo simulation; positive bias temperature instability (PBTI); power amplifier (PA); random doping fluctuation; reliability; variability

Abstract

This paper presents a novel biasing design that makes the complementary metaloxidesemiconductor radio frequency power amplifier (PA) resilient to process variability and device reliability. The biasing scheme provides resilience through the threshold voltage adjustment, and at the mean time, it does not degrade the PA performance. Analytical equations are derived for studying the resilient biasing on PA process sensitivity. A class-AB PA with a resilient design is compared with a PA without such a design using a Predictive Technology Model 65-nm technology. The Advanced Design System simulation results show that the resilient biasing design helps improve the robustness of the PA in P1dB, Psat, and power-added efficiency. Except for postfabrication calibration capability, the adaptive body biasing design reduces the impact of variability and reliability on PA significantly when subjected to threshold voltage shift and electron mobility degradation. © 2006 IEEE.

Publication Date

2-1-2011

Publication Title

IEEE Transactions on Electron Devices

Volume

58

Issue

2

Number of Pages

540-546

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/TED.2010.2093141

Socpus ID

79151474909 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/79151474909

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