Title
Near-Field Enhancement Of Infrared Intensities For F-F Transitions In Er3+ Ions Close To The Surface Of Silicon Nanoparticles
Keywords
Ab initio theory; Erbium doped waveguide amplifiers; Optical gain materials; Spin-orbit coupling
Abstract
Erbium doped waveguide amplifiers can be used in optical integrated circuits to compensate for signal losses. Such amplifiers use stimulated emission from the first excited state (4 I 13/2) to the ground state (4 I 15/2) of Er3+ at 1.53 μm, the standard wavelength for optical communication. Since the intra-f transitions are parity forbidden for free Er3+ ions, the absorption and the emission cross sections are quite small for such doped amplifiers. To enhance the absorption, Si nanoclusters can be embedded in silica matrix. Here we investigate the effect of the Si nanocluster on the Er3+ emission using ab initio theory for the first time. We combine multi-reference configuration interaction with one-electron spin-orbit Hamiltonian and relativistic effective core potentials. Our calculations show that the presence of a polarizable Be atom at 5Å from the Er3+ ion in a crystalline environment can lead to an enhancement in the emission by a factor of three. The implications of this effect in designing more efficient optical gain materials are discussed. © 2010 Springer-Verlag.
Publication Date
3-1-2011
Publication Title
Journal of Molecular Modeling
Volume
17
Issue
3
Number of Pages
423-428
Document Type
Article
Personal Identifier
scopus
DOI Link
https://doi.org/10.1007/s00894-010-0708-6
Copyright Status
Unknown
Socpus ID
79954443588 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/79954443588
STARS Citation
Borowska, Lesya; Fritzsche, Stephan; Kik, Pieter G.; and Masunov, Artëm E., "Near-Field Enhancement Of Infrared Intensities For F-F Transitions In Er3+ Ions Close To The Surface Of Silicon Nanoparticles" (2011). Scopus Export 2010-2014. 3384.
https://stars.library.ucf.edu/scopus2010/3384